دیتاشیت MJE210G

MJE210

مشخصات دیتاشیت

نام دیتاشیت MJE210
حجم فایل 57.179 کیلوبایت
نوع فایل pdf
تعداد صفحات 4

دانلود دیتاشیت MJE210

MJE210 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi MJE210G
  • Transistor Type: PNP
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 1.5W
  • Transition Frequency (fT): 65MHz
  • DC Current Gain (hFE@Ic,Vce): 45@2A,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.8V@5A,1A
  • Package: TO-225
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
  • Power - Max: 1.5W
  • Frequency - Transition: 65MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32-3
  • Base Part Number: MJE210
  • detail: Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.5W Through Hole SOT-32-3