FDA59N30 Datasheet
Datasheet specifications
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Datasheet's name
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FDA59N30
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File size
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70.016
KB
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File type
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pdf
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Number of pages
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10
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Technical specifications
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDA59N30
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
500W
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Total Gate Charge (Qg@Vgs):
100nC@10V
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Drain Source Voltage (Vdss):
300V
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Input Capacitance (Ciss@Vds):
4670pF@25V
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Continuous Drain Current (Id):
59A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
56mΩ@10V,29.5A
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Package:
TO-3P
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Manufacturer:
onsemi
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Series:
UniFET™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
300V
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Current - Continuous Drain (Id) @ 25°C:
59A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
56mOhm @ 29.5A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
4670pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
500W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-3PN
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Package / Case:
TO-3P-3, SC-65-3
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Base Part Number:
FDA59
