FDA59N30

FDA59N30

FDA59N30

در 4 فروشگاه

مشخصات فنی:
ManufacturerON Semiconductor
PackageTO-3P-3, SC-65-3
Datasheet FDA59N30
Description ---
تغییرات قیمت
مشخصات
  • Manufacturer ON Semiconductor
  • Series UniFET™
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 300V
  • Current - Continuous Drain (Id) @ 25°C 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 56mOhm @ 29.5A, 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 500W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-3PN
  • Package / Case TO-3P-3, SC-65-3
  • Base Part Number FDA59
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