دیتاشیت FDA28N50F
مشخصات دیتاشیت
| نام دیتاشیت |
FDA28N50F
|
| حجم فایل |
1563.791
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDA28N50F
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
310W
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Total Gate Charge (Qg@Vgs):
105nC@10V
-
Drain Source Voltage (Vdss):
500V
-
Input Capacitance (Ciss@Vds):
5387pF@25V
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Continuous Drain Current (Id):
28A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
175mΩ@14A,10V
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Package:
TO-3P
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Manufacturer:
onsemi
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Series:
UniFET™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
175mOhm @ 14A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
105nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
5387pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
310W (Tc)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-3PN
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Package / Case:
TO-3P-3, SC-65-3
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Base Part Number:
FDA28
