دیتاشیت NVR1P02T1G
مشخصات دیتاشیت
| نام دیتاشیت |
N(T,V)R1P02
|
| حجم فایل |
119.564
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NVR1P02T1G
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
400mW
-
Total Gate Charge (Qg@Vgs):
2.5nC@5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
165pF@5V
-
Continuous Drain Current (Id):
1A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.3V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
180mΩ@10V,1.5A
-
Package:
SOT-23(TO-236)
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
20V
-
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
-
Vgs(th) (Max) @ Id:
2.3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 5V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
165pF @ 5V
-
FET Feature:
-
-
Power Dissipation (Max):
400mW (Ta)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SOT-23-3
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
NVR1P0
-
detail:
P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3
