دیتاشیت MJE350G
مشخصات دیتاشیت
| نام دیتاشیت |
MJE350
|
| حجم فایل |
142.611
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJE350G
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
500mA
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Power Dissipation (Pd):
20W
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Transition Frequency (fT):
-
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DC Current Gain (hFE@Ic,Vce):
30@50mA,10V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
300V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
-
Package:
TO-225
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Bulk
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Part Status:
Active
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
300V
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Vce Saturation (Max) @ Ib, Ic:
-
-
Current - Collector Cutoff (Max):
100µA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
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Power - Max:
20W
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Frequency - Transition:
-
-
Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
TO-225AA
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Base Part Number:
MJE350
