MJE350G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | MJE350 |
| Description | --- |
فروشنده های MJE350G
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| MJE350G | بدون قیمت |
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مشخصات MJE350G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJE350G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 20W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 30@50mA,10V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 300V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
- Package TO-225
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 300V
- Vce Saturation (Max) @ Ib, Ic -
- Current - Collector Cutoff (Max) 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V
- Power - Max 20W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-225AA
- Base Part Number MJE350
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| MJE350G | بدون قیمت |
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