MJE5852G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJE5852G
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حجم فایل
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86.125
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJE5852G
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
8A
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Power Dissipation (Pd):
80W
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Transition Frequency (fT):
-
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DC Current Gain (hFE@Ic,Vce):
5@5A,5V
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Collector Cut-Off Current (Icbo):
-
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Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
5V@8A,3A
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
SWITCHMODE™
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Packaging:
Tube
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
8A
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Voltage - Collector Emitter Breakdown (Max):
400V
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Vce Saturation (Max) @ Ib, Ic:
5V @ 3A, 8A
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Current - Collector Cutoff (Max):
-
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DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 5A, 5V
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Power - Max:
80W
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Frequency - Transition:
-
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220AB
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Base Part Number:
MJE5852
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detail:
Bipolar (BJT) Transistor PNP 400V 8A 80W Through Hole TO-220AB
