MJE5852G

MJE5852G

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مشخصات فنی:
Manufacturer onsemi
Package TO-220-3
Datasheet MJE5850,1,2
Description Bipolar (BJT) Transistor PNP 400V 8A 80W Through Hole TO-220AB

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi MJE5852G
  • Transistor Type PNP
  • Operating Temperature -65°C~+150°C@(Tj)
  • Collector Current (Ic) 8A
  • Power Dissipation (Pd) 80W
  • Transition Frequency (fT) -
  • DC Current Gain (hFE@Ic,Vce) 5@5A,5V
  • Collector Cut-Off Current (Icbo) -
  • Collector-Emitter Breakdown Voltage (Vceo) 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 5V@8A,3A
  • Package TO-220
  • Manufacturer onsemi
  • Series SWITCHMODE™
  • Packaging Tube
  • Part Status Obsolete
  • Current - Collector (Ic) (Max) 8A
  • Voltage - Collector Emitter Breakdown (Max) 400V
  • Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A
  • Current - Collector Cutoff (Max) -
  • DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A, 5V
  • Power - Max 80W
  • Frequency - Transition -
  • Mounting Type Through Hole
  • Package / Case TO-220-3
  • Supplier Device Package TO-220AB
  • Base Part Number MJE5852
  • detail Bipolar (BJT) Transistor PNP 400V 8A 80W Through Hole TO-220AB

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