دیتاشیت MJD5731T4G
مشخصات دیتاشیت
| نام دیتاشیت |
MJD5731
|
| حجم فایل |
131.117
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MJD5731T4G
-
Transistor Type:
PNP
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
1.56W
-
Transition Frequency (fT):
10MHz
-
DC Current Gain (hFE@Ic,Vce):
30@300mA,10V
-
Collector Cut-Off Current (Icbo):
100uA
-
Collector-Emitter Breakdown Voltage (Vceo):
350V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@1A,200mA
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
350V
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
-
Current - Collector Cutoff (Max):
100µA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
-
Power - Max:
1.56W
-
Frequency - Transition:
10MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Supplier Device Package:
DPAK
-
Base Part Number:
MJD57
-
detail:
Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK
