دیتاشیت BUV21G
مشخصات دیتاشیت
| نام دیتاشیت |
BUV21
|
| حجم فایل |
111.402
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BUV21G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
40A
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Power Dissipation (Pd):
250W
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Transition Frequency (fT):
8MHz
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DC Current Gain (hFE@Ic,Vce):
20@12A,2V
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Collector Cut-Off Current (Icbo):
3mA
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Collector-Emitter Breakdown Voltage (Vceo):
200V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.5V@3A,25A
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Package:
TO-204
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Manufacturer:
onsemi
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Series:
SWITCHMODE™
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Packaging:
Tray
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Part Status:
Active
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Current - Collector (Ic) (Max):
40A
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Voltage - Collector Emitter Breakdown (Max):
200V
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Vce Saturation (Max) @ Ib, Ic:
1.5V @ 3A, 25A
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Current - Collector Cutoff (Max):
3mA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 12A, 2V
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Power - Max:
250W
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Frequency - Transition:
8MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-204AE
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Supplier Device Package:
TO-3
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Base Part Number:
BUV21
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detail:
Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-3
