BUV21G
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| Manufacturer | ON Semiconductor |
| Package | TO-204AE |
| Datasheet | BUV21 |
| Description | Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-3 |
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تغییرات قیمت
مشخصات
- Manufacturer ON Semiconductor
- Series SWITCHMODE™
- Packaging Tray
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 40A
- Voltage - Collector Emitter Breakdown (Max) 200V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 3A, 25A
- Current - Collector Cutoff (Max) 3mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 12A, 2V
- Power - Max 250W
- Frequency - Transition 8MHz
- Operating Temperature -65°C ~ 200°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-204AE
- Supplier Device Package TO-3
- Base Part Number BUV21
- detail Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-3