دیتاشیت MMBT2222
مشخصات دیتاشیت
| نام دیتاشیت |
MMBT2222
|
| حجم فایل |
82.687
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
2
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
YONGYUTAI MMBT2222
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
600mA
-
Power Dissipation (Pd):
300mW
-
Transition Frequency (fT):
-
-
Collector Cut-Off Current (Icbo):
1uA
-
Collector-Emitter Breakdown Voltage (Vceo):
40V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@150mA,15mA
-
Package:
SOT-23(TO-236)
-
Manufacturer:
YONGYUTAI
-
Series:
-
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
Current - Collector (Ic) (Max):
600mA
-
Voltage - Collector Emitter Breakdown (Max):
30V
-
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
-
Current - Collector Cutoff (Max):
10µA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
-
Power - Max:
350mW
-
Frequency - Transition:
250MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Supplier Device Package:
SOT-23-3
-
Base Part Number:
MMBT2222
