دیتاشیت IXFK80N60P3
مشخصات دیتاشیت
| نام دیتاشیت |
IXFK-FX80N60P3
|
| حجم فایل |
135.147
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
HiPerFET™, Polar3™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
-
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
70mOhm @ 500mA, 10V
-
Vgs(th) (Max) @ Id:
5V @ 8mA
-
Gate Charge (Qg) (Max) @ Vgs:
190nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
13100pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
1300W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-264AA (IXFK)
-
Package / Case:
TO-264-3, TO-264AA
-
detail:
N-Channel 600V 80A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)
