دیتاشیت IXFN50N80Q2
مشخصات دیتاشیت
| نام دیتاشیت |
IXFN50N80Q2
|
| حجم فایل |
175.446
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Littelfuse/IXYS IXFN50N80Q2
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.135kW
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Total Gate Charge (Qg@Vgs):
260nC@10V
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Drain Source Voltage (Vdss):
800V
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Input Capacitance (Ciss@Vds):
13500pF@25V
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Continuous Drain Current (Id):
50A
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Gate Threshold Voltage (Vgs(th)@Id):
5.5V@8mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
160mΩ@10V,25A
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Package:
SOT-227
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Manufacturer:
IXYS
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Series:
HiPerFET™
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Packaging:
Tube
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Part Status:
Not For New Designs
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
800V
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Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
160mOhm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
5.5V @ 8mA
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Gate Charge (Qg) (Max) @ Vgs:
260nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
13500pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
1135W (Tc)
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Mounting Type:
Chassis Mount
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Supplier Device Package:
SOT-227B
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Package / Case:
SOT-227-4, miniBLOC
