IXFN50N80Q2

IXFN50N80Q2

IXFN50N80Q2

در 3 فروشگاه

مشخصات فنی:
ManufacturerIXYS
PackageSOT-227-4, miniBLOC
Datasheet IXFN50N80Q2
Description ---
تغییرات قیمت
مشخصات
  • Manufacturer IXYS
  • Series HiPerFET™
  • Packaging Tube
  • Part Status Not For New Designs
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 800V
  • Current - Continuous Drain (Id) @ 25°C 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 1135W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Chassis Mount
  • Supplier Device Package SOT-227B
  • Package / Case SOT-227-4, miniBLOC
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