دیتاشیت IXTH13N110
مشخصات دیتاشیت
| نام دیتاشیت |
IXTH13N110
|
| حجم فایل |
205.106
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
MegaMOS™
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
1100V
-
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
920mOhm @ 500mA, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
195nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
5650pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
360W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247 (IXTH)
-
Package / Case:
TO-247-3
-
detail:
N-Channel 1100V 13A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)
