IXTH13N110

IXTH13N110

IXTH13N110

در 5 فروشگاه

مشخصات فنی:
ManufacturerIXYS
PackageTO-247-3
Datasheet IXTH13N110
Description N-Channel 1100V 13A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)
تغییرات قیمت
مشخصات
  • Manufacturer IXYS
  • Series MegaMOS™
  • Packaging Tube
  • Part Status Obsolete
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 1100V
  • Current - Continuous Drain (Id) @ 25°C 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 920mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 5650pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 360W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-247 (IXTH)
  • Package / Case TO-247-3
  • detail N-Channel 1100V 13A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)
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