دیتاشیت IXFK20N80Q
مشخصات دیتاشیت
| نام دیتاشیت | IXF(H,K,T)20N80Q |
|---|---|
| حجم فایل | 207.262 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 3 |
دانلود دیتاشیت IXF(H,K,T)20N80Q |
IXF(H,K,T)20N80Q Datasheet |
|---|
مشخصات
- Manufacturer: IXYS
- Series: HiPerFET™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
- detail: N-Channel 800V 20A (Tc) 360W (Tc) Through Hole TO-264AA (IXFK)
