دیتاشیت IXBH42N170
مشخصات دیتاشیت
نام دیتاشیت |
IXB(H,T)42N170
|
حجم فایل |
181.663
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
6
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
BIMOSFET™
-
Packaging:
Bulk
-
Part Status:
Active
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IGBT Type:
-
-
Voltage - Collector Emitter Breakdown (Max):
1700V
-
Current - Collector (Ic) (Max):
80A
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Current - Collector Pulsed (Icm):
300A
-
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 42A
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Power - Max:
360W
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Switching Energy:
-
-
Input Type:
Standard
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Gate Charge:
188nC
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Td (on/off) @ 25°C:
-
-
Test Condition:
-
-
Reverse Recovery Time (trr):
1.32µs
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247AD (IXBH)
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Base Part Number:
IXB*42N170