دیتاشیت CSD19533KCS
مشخصات دیتاشیت
| نام دیتاشیت |
CSD19533KCS
|
| حجم فایل |
731.672
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Texas Instruments CSD19533KCS
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
188W
-
Total Gate Charge (Qg@Vgs):
35nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
2670pF@50V
-
Continuous Drain Current (Id):
100A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
10.5mΩ@55A,10V
-
Package:
TO-220
-
Manufacturer:
Texas Instruments
-
Power Dissipation (Max):
188W (Tc)
-
Drain to Source Voltage (Vdss):
100V
-
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 55A, 10V
-
Vgs (Max):
±20V
-
FET Type:
N-Channel
-
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
-
Technology:
MOSFET (Metal Oxide)
-
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
-
FET Feature:
-
-
Input Capacitance (Ciss) (Max) @ Vds:
2670pF @ 50V
-
Packaging:
Tube
-
Package / Case:
TO-220-3
-
Part Status:
Active
-
Series:
NexFET™
-
Vgs(th) (Max) @ Id:
3.4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
-
Supplier Device Package:
TO-220-3
-
Mounting Type:
Through Hole
-
Base Part Number:
CSD19533
-
detail:
N-Channel 100V 100A (Ta) 188W (Tc) Through Hole TO-220-3
