CSD19533KCS
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| Manufacturer | Texas Instruments |
| Package | TO-220-3 |
| Datasheet | CSD19533KCS |
| Description | N-Channel 100V 100A (Ta) 188W (Tc) Through Hole TO-220-3 |
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مشخصات CSD19533KCS
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD19533KCS
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 188W
- Total Gate Charge (Qg@Vgs) 35nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 2670pF@50V
- Continuous Drain Current (Id) 100A
- Gate Threshold Voltage (Vgs(th)@Id) 3.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 10.5mΩ@55A,10V
- Package TO-220
- Manufacturer Texas Instruments
- Power Dissipation (Max) 188W (Tc)
- Drain to Source Voltage (Vdss) 100V
- Rds On (Max) @ Id, Vgs 10.5mOhm @ 55A, 10V
- Vgs (Max) ±20V
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 100A (Ta)
- FET Feature -
- Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 50V
- Packaging Tube
- Package / Case TO-220-3
- Part Status Active
- Series NexFET™
- Vgs(th) (Max) @ Id 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
- Supplier Device Package TO-220-3
- Mounting Type Through Hole
- Base Part Number CSD19533
- detail N-Channel 100V 100A (Ta) 188W (Tc) Through Hole TO-220-3
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