STP110N8F6 دیتاشیت

STP110N8F6

مشخصات دیتاشیت

نام دیتاشیت STP110N8F6
حجم فایل 50.966 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

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STP110N8F6 13 pages

STP110N8F6 2 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP110N8F6
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 200W
  • Total Gate Charge (Qg@Vgs): 150nC@10V
  • Drain Source Voltage (Vdss): 80V
  • Input Capacitance (Ciss@Vds): 9130pF@40V
  • Continuous Drain Current (Id): 110A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,55A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ F6
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP110
  • detail: N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220

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