STP110N8F6
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STP110N8F6 |
| Description | N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220 |
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مشخصات STP110N8F6
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP110N8F6
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 200W
- Total Gate Charge (Qg@Vgs) 150nC@10V
- Drain Source Voltage (Vdss) 80V
- Input Capacitance (Ciss@Vds) 9130pF@40V
- Continuous Drain Current (Id) 110A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 6.5mΩ@10V,55A
- Package TO-220
- Manufacturer STMicroelectronics
- Series STripFET™ F6
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 6.5mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 9130pF @ 40V
- FET Feature -
- Power Dissipation (Max) 200W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP110
- detail N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220
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