دیتاشیت CSD18502KCS
مشخصات دیتاشیت
نام دیتاشیت |
CSD18502KCS
|
حجم فایل |
800.098
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
10
|
مشخصات
-
Power Dissipation (Max):
259W (Tc)
-
Base Part Number:
CSD18502
-
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 10V
-
FET Feature:
-
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Series:
NexFET™
-
Manufacturer:
Texas Instruments
-
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
-
Supplier Device Package:
TO-220-3
-
Vgs (Max):
±20V
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Package / Case:
TO-220-3
-
Drain to Source Voltage (Vdss):
40V
-
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 100A, 10V
-
Input Capacitance (Ciss) (Max) @ Vds:
4680pF @ 20V
-
Packaging:
Tube
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
-
Mounting Type:
Through Hole
-
Technology:
MOSFET (Metal Oxide)
-
Part Status:
Active
-
FET Type:
N-Channel