CSD18502KCS
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| Manufacturer | Texas Instruments |
| Package | TO-220-3 |
| Datasheet | CSD18502KCS |
| Description | --- |
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مشخصات CSD18502KCS
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD18502KCS
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 259W
- Total Gate Charge (Qg@Vgs) 62nC@10V
- Drain Source Voltage (Vdss) 40V
- Input Capacitance (Ciss@Vds) 4680pF@20V
- Continuous Drain Current (Id) 100A
- Gate Threshold Voltage (Vgs(th)@Id) 2.1V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.9mΩ@100A,10V
- Package TO-220
- Manufacturer Texas Instruments
- Power Dissipation (Max) 259W (Tc)
- Base Part Number CSD18502
- Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
- FET Feature -
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Series NexFET™
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Supplier Device Package TO-220-3
- Vgs (Max) ±20V
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 40V
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 4680pF @ 20V
- Packaging Tube
- Vgs(th) (Max) @ Id 2.1V @ 250µA
- Mounting Type Through Hole
- Technology MOSFET (Metal Oxide)
- Part Status Active
- FET Type N-Channel
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