دیتاشیت STP10NK60Z
مشخصات دیتاشیت
| نام دیتاشیت |
STx10NK60Z
|
| حجم فایل |
961.134
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
24
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STP10NK60Z
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
115W
-
Total Gate Charge (Qg@Vgs):
70nC@10V
-
Input Capacitance (Ciss@Vds):
1370pF@25V
-
Continuous Drain Current (Id):
10A
-
Gate Threshold Voltage (Vgs(th)@Id):
4.5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
750mΩ@4.5A,10V
-
Package:
TO-220
-
Manufacturer:
STMicroelectronics
-
Series:
SuperMESH™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
600V
-
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
750mOhm @ 4.5A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
1370pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
115W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220AB
-
Package / Case:
TO-220-3
-
Base Part Number:
STP10
-
detail:
N-Channel 600V 10A (Tc) 115W (Tc) Through Hole TO-220AB
