FQP33N10 دیتاشیت

FQP33N10

مشخصات دیتاشیت

نام دیتاشیت FQP33N10
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FQP33N10

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

FQP33N10 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQP33N10
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 127W
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 1500pF@25V
  • Continuous Drain Current (Id): 33A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 52mΩ@10V,16.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP3
  • detail: N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-220-3

محصولات مشابه