دیتاشیت FDT457N
مشخصات دیتاشیت
| نام دیتاشیت |
FDT457N
|
| حجم فایل |
201.623
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDT457N
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Operating Temperature:
-65°C~+150°C@(Tj)
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Power Dissipation (Pd):
3W
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Total Gate Charge (Qg@Vgs):
5.9nC@5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
235pF@15V
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Continuous Drain Current (Id):
5A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
60mΩ@10V,5A
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Package:
SOT-223-4
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
60mOhm @ 5A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
5.9nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
235pF @ 15V
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FET Feature:
-
-
Power Dissipation (Max):
3W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-223-4
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Package / Case:
TO-261-4, TO-261AA
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Base Part Number:
FDT45
