FDT457N
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| Manufacturer | onsemi |
| Package | TO-261-4, TO-261AA |
| Datasheet | FDT457N |
| Description | --- |
فروشنده های FDT457N
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مشخصات FDT457N
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDT457N
- Operating Temperature -65°C~+150°C@(Tj)
- Power Dissipation (Pd) 3W
- Total Gate Charge (Qg@Vgs) 5.9nC@5V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 235pF@15V
- Continuous Drain Current (Id) 5A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 60mΩ@10V,5A
- Package SOT-223-4
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 60mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 5V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 235pF @ 15V
- FET Feature -
- Power Dissipation (Max) 3W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223-4
- Package / Case TO-261-4, TO-261AA
- Base Part Number FDT45
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