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FDC6506P Datasheet
Datasheet specifications
| Datasheet's name | FDC6506P |
|---|---|
| File size | 169.772 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet FDC6506P |
Download Datasheet |
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Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A
- Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT™-6
- Base Part Number: FDC6506