دیتاشیت STY60NK30Z
مشخصات دیتاشیت
| نام دیتاشیت |
STY60NK30Z
|
| حجم فایل |
194.723
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STY60NK30Z
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
450W
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Total Gate Charge (Qg@Vgs):
220nC@10V
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Drain Source Voltage (Vdss):
300V
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Input Capacitance (Ciss@Vds):
7200pF@25V
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Continuous Drain Current (Id):
60A
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Gate Threshold Voltage (Vgs(th)@Id):
4.5V@100uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
45mΩ@10V,30A
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Package:
-
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Manufacturer:
STMicroelectronics
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Series:
SuperMESH™
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Packaging:
Tube
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Part Status:
Not For New Designs
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
300V
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Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
45mOhm @ 30A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 100µA
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Gate Charge (Qg) (Max) @ Vgs:
220nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
7200pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
450W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
MAX247™
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Package / Case:
TO-247-3
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Base Part Number:
STY60N
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detail:
N-Channel 300V 60A (Tc) 450W (Tc) Through Hole MAX247™
