دیتاشیت FQP27P06

FQP27P06

مشخصات دیتاشیت

نام دیتاشیت FQP27P06
حجم فایل 926.92 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت FQP27P06

FQP27P06 Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQP27P06
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 120W
  • Total Gate Charge (Qg@Vgs): 43nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 1400pF@25V
  • Continuous Drain Current (Id): 27A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@10V,13.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP2