FQP27P06 数据手册
其他文档
TO220B03 Pkg Drawing 1 pages
FQP27P06 8 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQP27P06
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 120W
- Total Gate Charge (Qg@Vgs): 43nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 1400pF@25V
- Continuous Drain Current (Id): 27A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@10V,13.5A
- Package: TO-220
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP2