STx10NK60Z دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STx10NK60Z
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حجم فایل
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961.134
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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24
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STB10NK60ZT4
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
115W
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Total Gate Charge (Qg@Vgs):
70nC@10V
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Drain Source Voltage (Vdss):
600V
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Input Capacitance (Ciss@Vds):
1370pF@25V
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Continuous Drain Current (Id):
10A
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Gate Threshold Voltage (Vgs(th)@Id):
4.5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
750mΩ@10V,4.5A
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Package:
TO-263
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Manufacturer:
STMicroelectronics
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Series:
SuperMESH™
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Packaging:
Cut Tape (CT)
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Part Status:
Not For New Designs
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
750mOhm @ 4.5A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1370pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
115W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D2PAK
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
STB10N
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detail:
N-Channel 600V 10A (Tc) 115W (Tc) Surface Mount D2PAK
