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2N7002KDW-GP Datasheet
Datasheet specifications
| Datasheet's name | 2N7002K, 2V7002K |
|---|---|
| File size | 411.23 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet 2N7002K, 2V7002K |
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Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: 2N7002
- detail: N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23 (TO-236AB)