2N7002K
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| Manufacturer | FUXINSEMI |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | 2N7002K, 2V7002K |
| Description | --- |
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تغییرات قیمت
مشخصات 2N7002K
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet FUXINSEMI 2N7002K
- Operating Temperature +150°C@(Tj)
- Power Dissipation (Pd) 350mW
- Total Gate Charge (Qg@Vgs) 2.4nC@4.5V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 18pF@25V
- Continuous Drain Current (Id) 340mA
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 7pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.3Ω@10V,500mA
- Package SOT-23(TO-236)
- Manufacturer FUXINSEMI
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
- FET Feature -
- Power Dissipation (Max) 350mW (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23 (TO-236AB)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number 2N7002
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