2SC5824T100R

2SC5824T100R

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Technical specifications:
Manufacturer ROHM Semicon
Package ---
Datasheet 2SC5824T100R
Description ---

sellers 2SC5824T100R


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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet ROHM Semicon 2SC5824T100R
  • Transistor Type NPN
  • Operating Temperature +150°C@(Tj)
  • Collector Current (Ic) 3A
  • Power Dissipation (Pd) 2W
  • Transition Frequency (fT) 200MHz
  • DC Current Gain (hFE@Ic,Vce) 180@100mA,2V
  • Collector Cut-Off Current (Icbo) 1uA
  • Collector-Emitter Breakdown Voltage (Vceo) 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@2A,200mA
  • Package SOT-89
  • Manufacturer ROHM Semicon

Sellers


Price 
2SC5824T100R 2SC5824T100R Not Available No price Online shopping

Last shop price change:

2SC5824T100R 2SC5824T100R Not Available No price The price of this shop's products has not been updated! Online shopping

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