2SB1386
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| Manufacturer | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Package | --- |
| Datasheet | 2SB1386 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. 2SB1386
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 500mW
- Transition Frequency (fT) 120MHz
- DC Current Gain (hFE@Ic,Vce) 180@500mA,2V
- Collector Cut-Off Current (Icbo) 500nA
- Collector-Emitter Breakdown Voltage (Vceo) 20V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@4A,100mA
- Package SOT-89-3
- Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
- Part id 172861
Sellers
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2SB1386 | No price |
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2SB1386 | Not Available No price |
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