2N7002K-T1-GE3

2N7002K-T1-GE3

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Technical specifications:
Manufacturer Vishay Intertech
Package ---
Datasheet 2N7002K-T1-GE3
Description ---

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Specifications

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Vishay Intertech 2N7002K-T1-GE3
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 350mW
  • Total Gate Charge (Qg@Vgs) 0.6nC@4.5V
  • Drain Source Voltage (Vdss) 60V
  • Input Capacitance (Ciss@Vds) 30pF@25V
  • Continuous Drain Current (Id) 300mA
  • Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 2Ω@10V,500mA
  • Package SOT-23
  • Manufacturer Vishay Intertech

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