SS8550-Y2
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| Manufacturer | MDD(Microdiode Electronics) |
| Package | --- |
| Datasheet | SS8550-Y2 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet MDD(Microdiode Electronics) SS8550-Y2
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 100MHz
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@800mA,80mA
- Package SOT-23
- Manufacturer MDD(Microdiode Electronics)
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