MMBT3906 RFG
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| Manufacturer | Taiwan Semiconductor |
| Package | --- |
| Datasheet | MMBT3906 RFG |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Taiwan Semiconductor MMBT3906 RFG
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 200mA
- Power Dissipation (Pd) 350mW
- Transition Frequency (fT) 250MHz
- DC Current Gain (hFE@Ic,Vce) 100@10mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 400mV@50mA,5mA
- Package SOT-23(TO-236)
- Manufacturer Taiwan Semiconductor
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