NZT45H8
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | NZT45H8 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NZT45H8
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 1.5W
- Transition Frequency (fT) 40MHz
- DC Current Gain (hFE@Ic,Vce) 40@4A,1V
- Collector Cut-Off Current (Icbo) 10uA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@8A,400mA
- Package SOT-223
- Manufacturer onsemi
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