SUM110P06-08L-E3

SUM110P06-08L-E3

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Technical specifications:
Manufacturer Vishay Intertech
Package ---
Datasheet SUM110P06-08L-E3
Description ---

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Specifications

  • RoHS true
  • Type P Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Vishay Intertech SUM110P06-08L-E3
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 3.75W;272W
  • Total Gate Charge (Qg@Vgs) 240nC@10V
  • Drain Source Voltage (Vdss) 60V
  • Input Capacitance (Ciss@Vds) 9200pF@25V
  • Continuous Drain Current (Id) 110A
  • Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 10.5mΩ@4.5V,20A
  • Package TO-263
  • Manufacturer Vishay Intertech

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