2N5551
In 13 Shop
From 631 To 3,000 IRT
| Manufacturer | FUXINSEMI |
| Package | --- |
| Datasheet | 2N5551 |
| Description | --- |
sellers 2N5551
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2N5551 | 631 IRT |
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2N5551 | 930 IRT |
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2N5551 | 963 IRT |
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2N5551 | 1050 IRT |
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2N5551 | 1811 IRT |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet FUXINSEMI 2N5551
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 100MHz
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@50mA,5mA
- Package TO-92-3
- Manufacturer FUXINSEMI
- DC Current Gain (hFE@Ic,Vce) 80@10mA,5V
Sellers
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2N5551 | 631 IRT |
Online shopping
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2N5551 | 930 IRT |
Online shopping
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2N5551 | 963 IRT |
Online shopping
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2N5551 | 1050 IRT |
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2N5551 | 1811 IRT |
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