FQP12P10
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | FQP12P10 |
| Description | P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3 |
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مشخصات FQP12P10
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 290mOhm @ 5.75A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
- FET Feature -
- Power Dissipation (Max) 75W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP1
- detail P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3
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