SI2301CDS-T1-E3
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| Manufacturer | Vishay Intertech |
| Package | --- |
| Datasheet | SI2301CDS-T1-E3 |
| Description | --- |
sellers SI2301CDS-T1-E3
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Vishay Intertech SI2301CDS-T1-E3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 860mW;1.6W
- Total Gate Charge (Qg@Vgs) 10nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 405pF@10V
- Continuous Drain Current (Id) 3.1A
- Gate Threshold Voltage (Vgs(th)@Id) 1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 112mΩ@4.5V,2.8A
- Package SOT-23
- Manufacturer Vishay Intertech