BUL216
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | BUL216 |
| Description | Bipolar (BJT) Transistor NPN 800V 4A 90W Through Hole TO-220AB |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet STMicroelectronics BUL216
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 90W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 12@400mA,5V
- Collector Cut-Off Current (Icbo) 250uA
- Collector-Emitter Breakdown Voltage (Vceo) 800V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 3V@2A,660mA
- Package TO-220
- Manufacturer STMicroelectronics
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 800V
- Vce Saturation (Max) @ Ib, Ic 3V @ 660mA, 2A
- Current - Collector Cutoff (Max) 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 400mA, 5V
- Power - Max 90W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BUL216
- detail Bipolar (BJT) Transistor NPN 800V 4A 90W Through Hole TO-220AB
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