FDA59N30 ON TO-3P TO-3P
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| Manufacturer | ON Semiconductor |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | FDA59N30 |
| Description | N-Channel 300V 59A (Tc) 500W (Tc) Through Hole TO-3PN |
فروشنده های FDA59N30 ON TO-3P TO-3P
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مشخصات FDA59N30 ON TO-3P TO-3P
- Manufacturer ON Semiconductor
- Series UniFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 300V
- Current - Continuous Drain (Id) @ 25°C 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 56mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 25V
- FET Feature -
- Power Dissipation (Max) 500W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-3PN
- Package / Case TO-3P-3, SC-65-3
- Base Part Number FDA59
- detail N-Channel 300V 59A (Tc) 500W (Tc) Through Hole TO-3PN
فروشنده های FDA59N30 ON TO-3P TO-3P
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