دیتاشیت FDA59N30 ON TO-3P TO-3P

FDA59N30

مشخصات دیتاشیت

نام دیتاشیت FDA59N30
حجم فایل 1964.639 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FDA59N30

FDA59N30 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
  • Base Part Number: FDA59
  • detail: N-Channel 300V 59A (Tc) 500W (Tc) Through Hole TO-3PN

دیتاشیت محصولات مشابه