MJD122T4G
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | MJD122/127, NJVMJD122/127 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK |
فروشنده های MJD122T4G
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات MJD122T4G
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi MJD122T4G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 1.75W
- Transition frequency (fT) 4MHz
- DC current gain (hFE@Vce,Ic) 1000@4V,4A
- Collector-emitter voltage (Vceo) 100V
- Collector cut-off current (Icbo@Vcb) 10uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 4V@8A,80mA
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
- Current - Collector Cutoff (Max) 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
- Power - Max 1.75W
- Frequency - Transition 4MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number MJD12
- detail Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
فروشنده های MJD122T4G
فروشگاهی یافت نشد
